(China (Mainland))
Product Summary
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. It is featured with low noise and high gain, as well as high power gain. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Parametrics
Absolute maximum ratings:(1)Collector to Base Voltage, VCBO: 20V; (2)Collector to Emitter Voltage, VCEO: 12V; (3)Emitter to Base Voltage, VEBO: 3.0V; (4)Collector Current, IC: 100mA; (5)Total Power Dissipation, PT: 200mW; (6)Junction Temperature, Tj: 150℃; (7)Storage Temperature, Tstg: -65 to +150℃.
Features
Features:(1) Low Noise and High Gain, NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High Power Gain, MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SC3356-T1B R24 |
Other |
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Data Sheet |
Negotiable |
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2SC3356-T1B R25 |
Other |
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Data Sheet |
Negotiable |
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2SC3356-T1B-A R24 |
Other |
|
Data Sheet |
Negotiable |
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2SC3356-T1B-A R25 |
Other |
|
Data Sheet |
Negotiable |
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